| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
76,710 pcs
|
76710 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,216 pcs
|
6216 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,860 pcs
|
2860 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW5NK100Z is a high-voltage N-Channel Power MOSFET designed for switching applications. It features a maximum drain-source voltage (Vds) of 1000V and a continuous drain current (Id) of 3.5A at 25°C.
This MOSFET has a low on-resistance (Rds(on)) of 3.7 Ohms at 1.75A and 10V gate drive voltage. It also boasts a gate charge (Qg) of 59 nC and an input capacitance (Ciss) of 1154 pF, contributing to efficient switching performance. The device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 125W.
Packaged in a TO-247-3 through-hole configuration, the STW5NK100Z is suitable for demanding applications requiring high voltage and reliable performance. Its SuperMESH3™ technology offers superior dv/dt capability and is 100% avalanche tested.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 1000V.
The continuous drain current is 3.5A at Tc=25°C.
The package is TO-247-3, through-hole mounting.
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage is 4.5V at 100µA drain current.
The maximum on-resistance is 3.7 ohms at 1.75A drain current and 10V gate voltage.
The maximum gate charge is 59 nC at 10V gate voltage.