| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,450 pcs
|
2450 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request | |
|
110 pcs
|
110 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The STW5NB90 is an N-Channel MOSFET manufactured by STMicroelectronics, designed for high-voltage applications. It offers a breakdown voltage of 900V and a low drain-source resistance of 2.5Ω, contributing to efficient power handling.
This component is housed in a TO-247 package, suitable for through-hole mounting. It has a maximum power dissipation rating of 160W, indicating its capability for handling significant power loads. The operating temperature range spans from -65°C to 150°C, providing robustness in various environmental conditions.
The MOSFET exhibits fast switching characteristics with a rise time of 9ns and a fall time of 10ns. These specifications are crucial for applications requiring efficient power conversion and control. The proprietary edge termination structure and strip layout contribute to its exceptional avalanche and dv/dt capabilities, along with low gate charge and switching characteristics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage is 900V.
The drain-source resistance is 2.5Ω.
The maximum power dissipation is 160W.
The operating temperature range is from -65°C to 150°C.
The STW5NB90 is in a TO-247 package.