| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
27,496 pcs
|
27496 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
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The STW58N60DM2AG is an automotive-grade N-channel Power MOSFET manufactured by STMicroelectronics. Designed for high-voltage and high-current applications, it features a maximum drain-to-source voltage of 600V and a continuous drain current of 50A at 25°C. The typical on-resistance is rated at 0.052 Ohms.
This MOSFET is housed in a TO-247 package, which is a through-hole mounting type. Its robust design makes it suitable for demanding automotive applications where reliability and performance are critical. The device offers excellent performance characteristics for power management and switching tasks.
Key electrical specifications include a 600V drain-source voltage and a 50A continuous drain current. The typical on-resistance of 0.052 Ohms ensures efficient power transfer with minimal losses. The N-channel configuration and TO-247 package are standard for many high-power discrete semiconductor applications.