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STW57N65M5 The STMicroelectronics STW57N65M5 is an N-Channel MOSFET with a 650V drain-source voltage and 42A continuous drain current. It is housed in a TO-247-3 package.
Mfr Part #:

STW57N65M5

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STW57N65M5 is an N-Channel MOSFET with a 650V drain-source voltage and 42A continuous drain current. It is housed in a TO-247-3 package.
✓ Total Stock: 378 pcs
$ Price Range: $2.56

STW57N65M5 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
353 pcs
On Request
353 pcs On Request 1 On Request On Request 12+ On Request On Request
Speed Components Ltd ✓
Non-Authorised Inventory information
25 pcs
On Request
25 pcs On Request 1 On Request On Request 1212M On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

STW57N65M5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STW57N65M5 Description

Short technical summary and product information.

The STMicroelectronics STW57N65M5 is a high-performance N-Channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (Vdss) of 650V and a continuous drain current of 42A at Tc.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 63mOhm at 21A and 10V, and a gate threshold voltage (Vgs(th)) of 5V at 250µA. The MOSFET has a gate charge (Qg) of 98nC at 10V and an input capacitance (Ciss) of 4200pF at 100V. The maximum gate-source voltage is ±25V.

 

This device operates at a maximum junction temperature of 150°C and has a power dissipation of 250W (Tc). It is mounted using a through-hole method and comes in a TO-247-3 package.

 

The STW57N65M5 is suitable for various power electronics designs requiring robust and efficient switching capabilities.

STW57N65M5 Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STW57N65M5 N-Channel MOSFET
Subcategory: N-Channel

STW57N65M5 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STW57N65M5 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STW57N65M5 Features

  • 650V drain-source voltage rating.
  • 42A continuous drain current.
  • 63mOhm maximum on-resistance.
  • 150°C maximum operating temperature.
  • TO-247-3 through-hole package.

STW57N65M5 Applications

  • Suitable for power supply circuits.
  • Ideal for motor control applications.
  • Used in power factor correction.
  • Applicable in industrial power systems.

STW57N65M5 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the STW57N65M5?

650V.

What is the maximum continuous drain current?

42A at Tc.

What is the maximum on-resistance?

63mOhm at 21A, 10V.

What is the gate charge?

98nC at 10V.

What is the input capacitance?

4200pF at 100V.

What is the operating temperature range?

Maximum junction temperature 150°C.

What is the package type?

TO-247-3 through-hole.

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