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STW56NM60N The STW56NM60N is an N-channel Power MOSFET from STMicroelectronics with a 600V drain-source voltage and 45A continuous current rating. It is housed in a TO-247 package.
Mfr Part #:

STW56NM60N

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STW56NM60N is an N-channel Power MOSFET from STMicroelectronics with a 600V drain-source voltage and 45A continuous current rating. It is housed in a TO-247 package.
✓ Total Stock: 60 pcs
$ Price Range: $2.56

STW56NM60N Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
60 pcs
On Request
60 pcs On Request 1 On Request On Request 11+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

STW56NM60N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STW56NM60N Description

Short technical summary and product information.

The STMicroelectronics STW56NM60N is an N-channel Power MOSFET designed for high efficiency switching applications. It features a 600V drain-source voltage and a maximum continuous drain current of 45A at 25°C case temperature.

 

This MOSFET utilizes the second generation of MDmesh™ technology, offering a low on-resistance of 60mΩ at 22.5A and 10V, and a low gate charge of 150nC at 10V. These characteristics make it suitable for demanding high efficiency converters.

 

The device is packaged in a TO-247-3 through-hole package, with a maximum operating junction temperature of 150°C. Its thermal resistance from junction to case is 0.42°C/W.

 

Key electrical ratings include a gate-source voltage of ±25V and an input capacitance of 4800pF at 50V. The STW56NM60N is designed for switching applications where low on-resistance and gate charge are critical.

STW56NM60N Quick Information

Product Type: Power MOSFET
Canonical Name: STW56NM60N N-Channel Power MOSFET
Subcategory: N-Channel

STW56NM60N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STW56NM60N Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STW56NM60N Features

  • 600V drain-source voltage rating.
  • 45A continuous drain current.
  • Low 60mΩ on-resistance.
  • Low 150nC gate charge.
  • TO-247 package for through-hole mounting.

STW56NM60N Applications

  • High-voltage power supply switching circuits.
  • Motor control and inverter applications.
  • DC-DC converters and power factor correction.
  • Industrial power management systems.

STW56NM60N FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the STW56NM60N?

The maximum drain-source voltage (Vds) for the STW56NM60N is 600V.

What is the continuous drain current rating of the STW56NM60N?

The STW56NM60N has a continuous drain current rating of 45A at a case temperature of 25°C.

What is the maximum on-resistance of the STW56NM60N?

The maximum on-resistance (Rds On) for the STW56NM60N is 60mΩ when tested at 22.5A and 10V.

What is the package type for the STW56NM60N?

The STW56NM60N is supplied in a TO-247-3 package.

What is the maximum operating junction temperature for this MOSFET?

The maximum operating junction temperature (TJ) for the STW56NM60N is 150°C.

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