STW56N60M2 The STMicroelectronics STW56N60M2 is an N-Channel MOSFET with a 600V drain-source breakdown voltage and a continuous drain current of 52A. It is housed in a TO-247-3 package.
Mfr Part #:

STW56N60M2

Available from 3 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STW56N60M2 is an N-Channel MOSFET with a 600V drain-source breakdown voltage and a continuous drain current of 52A. It is housed in a TO-247-3 package.
✓ Total Stock: 3,031 pcs
$ Price Range: $2.56

STW56N60M2 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,420 pcs
1420 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,410 pcs
1410 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
201 pcs
201 pcs On Request 1 On Request On Request 17+ On Request On Request

STW56N60M2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STW56N60M2 Description

Short technical summary and product information.

The STMicroelectronics STW56N60M2 is a high-performance N-Channel MOSFET designed for power applications. It features a robust 600V drain-source breakdown voltage and a continuous drain current capability of 52A at a case temperature of 25°C. The MOSFET exhibits a low on-resistance of 55mOhm at 26A and 10V gate-source voltage, contributing to efficient power handling.

 

With a maximum power dissipation of 350W (Tc), the STW56N60M2 is suitable for demanding applications. It operates within a temperature range of -55°C to 150°C (TJ). The device utilizes MOSFET technology and has an enhancement mode channel.

 

Packaged in a TO-247-3 through-hole configuration, this MOSFET is designed for reliable mounting and integration into various electronic circuits. The MDmesh M2 series designation indicates its advanced technology for power switching applications.

STW56N60M2 Quick Information

Product Type: MOSFET
Series: MDmesh M2
Canonical Name: STMicroelectronics STW56N60M2 N-Channel MOSFET
Subcategory: Single MOSFETs

STW56N60M2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STW56N60M2 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STW56N60M2 Features

  • 600V drain-source breakdown voltage.
  • 52A continuous drain current.
  • 55mOhm maximum Rds On.
  • 150°C maximum operating temperature.
  • TO-247-3 through-hole package.

STW56N60M2 Applications

  • Used in switching power supply circuits.
  • Ideal for AC-DC converter designs.
  • Suitable for motor drive inverters.
  • Applicable in high-frequency DC-DC converters.
  • Used in power converters and inverters.

STW56N60M2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the STW56N60M2?

The drain-source voltage (Vdss) is 600V.

What package does the STW56N60M2 come in?

The STW56N60M2 is available in a TO-247-3 through-hole package.

What is the maximum operating temperature of the STW56N60M2?

The maximum junction temperature is 150°C.

What is the on-resistance of the STW56N60M2?

The maximum on-resistance is 55mOhm at 26A and 10V gate voltage.

What is the gate charge of the STW56N60M2?

The maximum gate charge is 91nC at 10V gate voltage.

Is the STW56N60M2 an N-channel or P-channel MOSFET?

It is an N-channel enhancement-mode MOSFET.

What is the input capacitance of the STW56N60M2?

The maximum input capacitance is 3750pF at 100V drain-source voltage.

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