| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,420 pcs
|
1420 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,410 pcs
|
1410 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
201 pcs
|
201 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW56N60M2 is a high-performance N-Channel MOSFET designed for power applications. It features a robust 600V drain-source breakdown voltage and a continuous drain current capability of 52A at a case temperature of 25°C. The MOSFET exhibits a low on-resistance of 55mOhm at 26A and 10V gate-source voltage, contributing to efficient power handling.
With a maximum power dissipation of 350W (Tc), the STW56N60M2 is suitable for demanding applications. It operates within a temperature range of -55°C to 150°C (TJ). The device utilizes MOSFET technology and has an enhancement mode channel.
Packaged in a TO-247-3 through-hole configuration, this MOSFET is designed for reliable mounting and integration into various electronic circuits. The MDmesh M2 series designation indicates its advanced technology for power switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 600V.
The STW56N60M2 is available in a TO-247-3 through-hole package.
The maximum junction temperature is 150°C.
The maximum on-resistance is 55mOhm at 26A and 10V gate voltage.
The maximum gate charge is 91nC at 10V gate voltage.
It is an N-channel enhancement-mode MOSFET.
The maximum input capacitance is 3750pF at 100V drain-source voltage.