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STW56N60DM2

The STMicroelectronics STW56N60DM2 is an N-channel Power MOSFET designed for switching applications. It features a 600V drain-source voltage and 50A continuous drain current.

✓ Total Stock: 6,548 pcs

$ Price Range: $2.56

STW56N60DM2 Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	3,101 pcs On Request	3101 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	2,006 pcs On Request	2006 pcs	On Request	1	On Request	On Request	24+	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	1,441 pcs On Request	1441 pcs	On Request	1	On Request	On Request	19+	On Request	On Request

STW56N60DM2 Description

Short technical summary and product information.

The STMicroelectronics STW56N60DM2 is a high voltage N-channel Power MOSFET from the MDmesh™ DM2 fast recovery diode series. It is designed for demanding high efficiency converters, bridge topologies, and ZVS phase-shift converters.

Key electrical specifications include a 600V drain-source voltage (VDS), a maximum continuous drain current (ID) of 50A at 25°C case temperature, and a maximum on-resistance (RDS(on)) of 60mΩ at 25A and 10V gate-source voltage. The device also features a low on-resistance, extremely low gate charge, and input capacitance, along with 100% avalanche tested and extremely high dv/dt ruggedness.

This MOSFET is housed in a TO-247-3 package, suitable for through-hole mounting. It operates within a temperature range of -55°C to 150°C (TJ). The technology used is MOSFET (Metal Oxide), and it is classified as an N-Channel FET type.

Applications for this MOSFET include general switching applications where high efficiency and ruggedness are required.

STW56N60DM2 Quick Information

Product Type: Power MOSFET

Series: MDmesh™ DM2

Canonical Name: STMicroelectronics STW56N60DM2 N-channel 600V 50A Power MOSFET

Subcategory: N-Channel

STW56N60DM2 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

STW56N60DM2 Estimated Pricing

Qty	Low	High
1+	$2.56	$2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STW56N60DM2 Features

600V drain-source voltage rating.
50A continuous drain current.
Low 60mOhm maximum on-resistance.
Fast-recovery body diode.
TO-247 package for through-hole mounting.

STW56N60DM2 Applications

Ideal for high efficiency converters.
Suitable for bridge topologies.
Used in ZVS phase-shift converters.
General switching applications.

STW56N60DM2 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of STW56N60DM2?

600V.

What package is the STW56N60DM2 available in?

TO-247-3 through-hole package.

What is the operating junction temperature range?

-55°C to 150°C.

What is the gate threshold voltage?

Maximum 5V at 250µA drain current.

What is the typical on-resistance?

Maximum 60mOhm at 25A drain current and 10V gate drive.

Is this MOSFET N-Channel or P-Channel?

N-Channel.

What is the maximum gate charge?

90nC at 10V gate voltage.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	STMicroelectronics
Current	50A (Tc)
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	4100 pF @ 100 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	360W (Tc)
Rds On (Max) @ Id, Vgs	60mOhm @ 25A, 10V
SVHC Present	Not Present
Supplier Device Package	TO-247-3
Supplier Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±25 V
Vgs(th) (Max) @ Id	5V @ 250µA