| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,081 pcs
|
1081 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
860 pcs
|
860 pcs | On Request | 1 | On Request | On Request | 2018+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW55NM60ND is a high-performance N-Channel MOSFET designed for power switching applications. It features a maximum Drain to Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 51A at a case temperature.
Key electrical characteristics include a low Rds On of 60mOhm at 25.5A and 10V Vgs, a gate threshold voltage of 5V at 250µA, and a gate charge (Qg) of 190nC at 10V. The input capacitance (Ciss) is rated at 5800pF at 50V.
This MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 350W (Tc). It is constructed using MOSFET (Metal Oxide) technology.
The STW55NM60ND is supplied in a TO-247-3 package and is designed for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
TO-247-3.
150°C.
Maximum 5V at 250µA.
60mOhm at 25.5A, 10V.
51A at case temperature.
350W at case temperature.