| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,131 pcs
|
4131 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request | |
|
515 pcs
|
515 pcs | On Request | 1 | On Request | On Request | 1047+ | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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This STMicroelectronics STW55NM60N is an N-Channel MOSFET designed for power applications. It offers a high drain-source voltage rating of 600V and a continuous drain current capability of 51A at 25°C.
The MOSFET features a low maximum on-resistance of 60mOhm at 25.5A and 10V gate drive voltage. The gate threshold voltage is 4V at 250µA, and the maximum gate charge is 190 nC at 10V. The maximum gate-source voltage is ±25V.
With a maximum power dissipation of 350W (Tc) and an operating junction temperature of 150°C, this component is suitable for demanding thermal environments. It is mounted using a Through Hole method and comes in a TO-247-3 package.
The STW55NM60N belongs to the MDmesh™ II series, indicating advanced technology for power conversion applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600 V.
TO-247-3 through-hole package.
150°C.
190 nC max at 10 V Vgs.
5800 pF max at 50 V Vds.
MDmesh II.