STW55NM50N The STMicroelectronics STW55NM50N is an N-Channel MOSFET designed for high voltage applications. It features a 500V drain-source voltage and a continuous drain current of 54A.
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STW55NM50N

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STW55NM50N is an N-Channel MOSFET designed for high voltage applications. It features a 500V drain-source voltage and a continuous drain current of 54A.
✓ Total Stock: 10,296 pcs
$ Price Range: $2.56

STW55NM50N Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,547 pcs
5547 pcs On Request 1 On Request On Request 847 On Request On Request
Non-Authorised Inventory information
4,749 pcs
4749 pcs On Request 1 On Request On Request 0945+ On Request On Request

STW55NM50N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STW55NM50N Description

Short technical summary and product information.

The STMicroelectronics STW55NM50N is an N-Channel MOSFET with a maximum drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 54A at a case temperature.

 

This MOSFET utilizes Metal Oxide technology and has a low on-resistance (Rds On) of 54mOhm at 27A and 10V gate-source voltage. Key electrical parameters include a gate threshold voltage (Vgs(th)) of 4V at 250µA, a maximum gate-source voltage of ±25V, a gate charge (Qg) of 180nC at 10V, and an input capacitance (Ciss) of 5800pF at 50V.

 

With a maximum power dissipation of 350W (Tc) and an operating temperature range up to 150°C (TJ), this device is suitable for demanding applications. It is packaged in a TO-247-3 case and features through-hole mounting.

 

The STW55NM50N is RoHS3 compliant and has an MSL rating of 1.

STW55NM50N Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STW55NM50N N-Channel MOSFET
Subcategory: N-Channel

STW55NM50N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STW55NM50N Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STW55NM50N Features

  • 500V drain-source voltage rating.
  • 54A continuous drain current.
  • 54mOhm maximum on-resistance.
  • TO-247-3 package with through-hole mounting.
  • RoHS3 compliant.

STW55NM50N Applications

  • Suitable for high voltage power switching.
  • Ideal for power supply applications.
  • Used in motor control circuits.
  • Applicable in industrial automation.

STW55NM50N FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the STW55NM50N?

The maximum drain-source voltage (Vdss) is 500V.

What is the continuous drain current of the STW55NM50N?

The continuous drain current is 54A.

What is the on-resistance of the STW55NM50N?

The maximum on-resistance (Rds On) is 54mOhm at 27A and 10V.

What package type is the STW55NM50N available in?

The STW55NM50N is available in a TO-247-3 package.

How is the STW55NM50N mounted?

The STW55NM50N is mounted using the through-hole method.

What is the operating temperature range for this MOSFET?

The operating temperature range is up to 150°C (TJ).

Is the STW55NM50N RoHS compliant?

Yes, the STW55NM50N is RoHS3 compliant.

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