STW54NM65ND The STMicroelectronics STW54NM65ND is an N-Channel MOSFET designed for high-power applications. It features a 650V drain-to-source voltage and a continuous drain current of 49A.
Mfr Part #:

STW54NM65ND

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STW54NM65ND is an N-Channel MOSFET designed for high-power applications. It features a 650V drain-to-source voltage and a continuous drain current of 49A.
✓ Total Stock: 2,108 pcs
$ Price Range: $2.56

STW54NM65ND Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,428 pcs
1428 pcs On Request 1 On Request On Request 1843+ On Request On Request
Non-Authorised Inventory information
680 pcs
680 pcs On Request 1 On Request On Request 15+ On Request On Request

STW54NM65ND Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STW54NM65ND Description

Short technical summary and product information.

The STMicroelectronics STW54NM65ND is a robust N-Channel MOSFET suitable for demanding applications. It offers a high drain-to-source voltage rating of 650V and can handle a continuous drain current of 49A at 25°C, with a maximum power dissipation of 350W.

 

This MOSFET utilizes Metal Oxide Semiconductor (MOSFET) technology and is designed for through-hole mounting in a TO-247-3 package. Key electrical characteristics include a maximum on-resistance of 1.5 Ohm at 2.7A and 10V, a gate threshold voltage of 4V at 250µA, and a gate charge of 30 nC at 10V. The maximum gate-source voltage is ±20V.

 

Operating at junction temperatures up to 150°C, the STW54NM65ND is built for thermal stability. Its input capacitance is rated at 610 pF at 25V. The component is compliant with RoHS3 standards and has an MSL rating of 1.

STW54NM65ND Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STW54NM65ND N-Channel MOSFET
Subcategory: Single FETs, MOSFETs

STW54NM65ND Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STW54NM65ND Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STW54NM65ND Features

  • N-Channel MOSFET technology
  • 650V drain-to-source voltage
  • 49A continuous drain current
  • 350W maximum power dissipation
  • TO-247-3 package, through hole mounting

STW54NM65ND Applications

  • Suitable for high-power applications
  • Designed for demanding electronic circuits
  • Power supply and conversion systems
  • Motor control applications

STW54NM65ND FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage (Vdss) for the STW54NM65ND?

The drain-to-source voltage (Vdss) is 650 V.

What is the continuous drain current (Id) at 25°C?

The continuous drain current (Id) at 25°C is 49A.

What is the maximum power dissipation for this MOSFET?

The maximum power dissipation is 350W.

What is the on-resistance (Rds On) at specified conditions?

The Rds On is a maximum of 1.5 Ohm at 2.7A and 10V.

What is the operating temperature range?

The operating temperature is up to 150°C (TJ).

What package type is the STW54NM65ND supplied in?

The component is supplied in a TO-247-3 package.

Is the STW54NM65ND RoHS compliant?

Yes, the RoHS Status is RoHS3 Compliant.

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