| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,500 pcs
|
5500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,880 pcs
|
2880 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW52NK25Z is a single N-Channel MOSFET designed for power applications. It features a maximum drain-source voltage (Vdss) of 250V and can handle a continuous current of 52A at the case temperature.
Key electrical characteristics include a maximum on-state resistance (Rds On) of 45mOhm at 26A and 10V, and a gate threshold voltage (Vgs(th)) of 4.5V at 150µA. The device has a maximum gate-source voltage (Vgs) of ±30V and a drive voltage of 10V. Input capacitance (Ciss) is rated at 4850 pF at 25V, and total gate charge (Qg) is 160 nC at 10V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is constructed using MOSFET (Metal Oxide) technology and comes in a TO-247-3 package, suitable for through-hole mounting.
The STW52NK25Z has a RoHS3 compliant status and an MSL 1 rating. Its REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
250V.
TO-247-3.
-55°C to 150°C (junction).
52A at case temperature Tc.
45mOhm maximum at 26A, 10V.
160nC at 10V.
4850pF at 25V.