| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,651 pcs
|
8651 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW50NB20 is a high-performance N-Channel Power MOSFET utilizing advanced PowerMESH technology. It is designed for demanding applications requiring high current and high-speed switching capabilities.
Key electrical specifications include a drain-source voltage (Vds) of 200V and a continuous drain current (Id) of 50A at 25°C. The device features a low typical on-resistance (Rds(on)) of 0.047 Ohms at 25A and 10V gate-source voltage, minimizing conduction losses. Its gate threshold voltage is typically 3V, and it supports a gate-source voltage rating of ±30V.
With a maximum power dissipation of 280W at 25°C, the STW50NB20 is suitable for power-intensive designs. It operates within a junction temperature range of -65°C to 150°C. The MOSFET is housed in a TO-247-3 package, designed for through-hole mounting, facilitating integration into various electronic circuits.
Applications for this MOSFET include switch mode power supplies (SMPS), DC-AC converters for welding equipment, uninterruptible power supplies (UPS), and motor drives. Its extremely high dv/dt capability and 100% avalanche tested status ensure reliability in harsh operating conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 200V.
The STW50NB20 is available in a TO-247-3 through-hole package.
The maximum operating junction temperature is 150°C.
The continuous drain current is 50A at 25°C case temperature and 32A at 100°C.
The maximum on-resistance is 55mΩ at VGS=10V and ID=25A, with a typical value of 47mΩ.
The maximum gate charge is 115nC at VGS=10V.
The single pulse avalanche energy is 1000mJ at starting junction temperature of 25°C.