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STW48N60M2-4 The STMicroelectronics STW48N60M2-4 is an N-Channel MOSFET with a 600V drain-source voltage and 42A continuous drain current. It comes in a TO-247-4 package.
Mfr Part #:

STW48N60M2-4

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STW48N60M2-4 is an N-Channel MOSFET with a 600V drain-source voltage and 42A continuous drain current. It comes in a TO-247-4 package.
✓ Total Stock: 2,450 pcs
$ Price Range: $2.56

STW48N60M2-4 Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Fe Components ✓
Non-Authorised Inventory information
1,740 pcs
On Request
1740 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
710 pcs
On Request
710 pcs On Request 1 On Request On Request 17+ On Request On Request
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STW48N60M2-4 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STW48N60M2-4 Description

Short technical summary and product information.

The STMicroelectronics STW48N60M2-4 is a high-performance N-Channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (Vdss) of 600V and a continuous drain current of 42A at the case temperature.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 70mOhm at 21A and 10V gate drive voltage. The device also has a gate charge (Qg) of 70 nC and an input capacitance (Ciss) of 3060 pF, both measured under specific conditions.

 

This MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 300W (Tc). It is housed in a TO-247-4 package and utilizes Through Hole mounting.

 

The STW48N60M2-4 is built using MOSFET (Metal Oxide) technology, offering efficient switching capabilities for various power electronics designs.

STW48N60M2-4 Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STW48N60M2-4 N-Channel MOSFET
Subcategory: N-Channel

STW48N60M2-4 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STW48N60M2-4 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STW48N60M2-4 Features

  • 600V drain-source voltage rating.
  • 42A continuous drain current capability.
  • Low 70mOhm Rds On at 21A.
  • TO-247-4 package for power applications.
  • N-Channel MOSFET technology.

STW48N60M2-4 Applications

  • Suitable for high voltage power supplies.
  • Used in power factor correction circuits.
  • Ideal for motor drive applications.
  • Applicable in industrial power systems.

STW48N60M2-4 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the STW48N60M2-4?

The maximum drain-source voltage (Vdss) is 600V.

What is the continuous drain current of the STW48N60M2-4?

The continuous drain current is 42A, measured at the case temperature.

What is the on-resistance of the STW48N60M2-4?

The maximum on-resistance (Rds On) is 70mOhm when measured at 21A drain current and 10V gate voltage.

What is the operating temperature range for this MOSFET?

The operating junction temperature (TJ) can reach up to 150°C.

What package type is the STW48N60M2-4 MOSFET?

The MOSFET is supplied in a TO-247-4 package.

How is the STW48N60M2-4 MOSFET mounted?

This component is designed for Through Hole mounting.

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