STW48N60DM2 The STMicroelectronics STW48N60DM2 is an N-Channel Power MOSFET designed for switching applications. It features a 600V drain-source voltage and a 40A continuous current rating.
Mfr Part #:

STW48N60DM2

Available from 4 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STW48N60DM2 is an N-Channel Power MOSFET designed for switching applications. It features a 600V drain-source voltage and a 40A continuous current rating.
✓ Total Stock: 5,153 pcs
$ Price Range: $2.56

STW48N60DM2 Available from 4 distributors

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40 pcs
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STW48N60DM2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STW48N60DM2 Description

Short technical summary and product information.

The STMicroelectronics STW48N60DM2 is a high voltage N-channel Power MOSFET from the MDmesh™ DM2 series. It is designed for demanding high efficiency converters and suitable for bridge topologies and ZVS phase-shift converters.

 

Key electrical specifications include a drain-source breakdown voltage (Vds) of 600V, a maximum continuous drain current (Id) of 40A at 25°C, and a low on-resistance (Rds On) of 79mOhm at 20A and 10V gate-source voltage. The device also features a gate threshold voltage (Vgs(th)) of 5V at 250µA and a maximum gate-source voltage of ±25V.

 

With a maximum power dissipation of 300W at 25°C, this MOSFET operates within a temperature range of -55°C to 150°C. It utilizes Metal Oxide Semiconductor (MOSFET) technology and is housed in a TO-247-3 package, suitable for through-hole mounting.

 

This MOSFET is characterized by its fast-recovery body diode, extremely low gate charge and input capacitance, low on-resistance, 100% avalanche tested, and extremely high dv/dt ruggedness. It is Zener-protected for enhanced reliability in switching applications.

STW48N60DM2 Quick Information

Product Type: Power MOSFET
Series: DM2
Canonical Name: STMicroelectronics STW48N60DM2 N-Channel Power MOSFET
Subcategory: N-Channel

STW48N60DM2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STW48N60DM2 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STW48N60DM2 Features

  • 600V drain-source breakdown voltage.
  • 40A continuous drain current.
  • Low 79mOhm on-resistance.
  • TO-247 package for through-hole mounting.
  • Suitable for high efficiency converters.

STW48N60DM2 Applications

  • Ideal for switching applications.
  • Used in high efficiency converters.
  • Suitable for bridge topologies.
  • Designed for ZVS phase-shift converters.

STW48N60DM2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the STW48N60DM2?

600V.

What is the continuous drain current rating?

40A at 25°C case temperature.

What is the on-resistance of the STW48N60DM2?

79mOhm maximum at 20A and 10V gate drive.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What package is the STW48N60DM2 available in?

TO-247-3 through-hole package.

What is the gate threshold voltage?

5V maximum at 250µA drain current.

What is the gate charge of the STW48N60DM2?

70nC at 10V gate-source voltage.

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