| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,333 pcs
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2333 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STW45NM50FD is an N-Channel enhancement mode power MOSFET manufactured by STMicroelectronics. It features a drain-source voltage rating of 500V and a continuous drain current of 45A at 25°C case temperature. The maximum on-resistance is 100mOhm at 22.5A drain current and 10V gate-source voltage. This device is designed for high efficiency power conversion applications.
The MOSFET offers a maximum gate charge of 120nC at 10V and an input capacitance of 3600pF at 25V drain-source voltage. Maximum power dissipation is 417W at case temperature. The operating junction temperature range spans from -65°C to 150°C, ensuring robust performance in demanding environments.
The STW45NM50FD is housed in a TO-247-3 through-hole package, suitable for high current and high voltage applications. It is RoHS3 compliant, with MSL 1 (unlimited) and REACH unaffected status. This component is ideal for use in power supplies, inverters, and motor control circuits requiring high voltage and current handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating temperature range is -65°C to 150°C (junction).
The STW45NM50FD is available in a TO-247-3 through-hole package.
The drain-source voltage rating is 500V.
The continuous drain current is 45A at 25°C case temperature.
The maximum on-resistance is 100mOhm at 22.5A drain current and 10V gate-source voltage.
Maximum power dissipation is 417W at case temperature.