| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,380 pcs
|
3380 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This STMicroelectronics STW43NM60N is an N-channel Power MOSFET featuring second generation MDmesh II technology. It is designed for high efficiency converters and demanding switching applications.
Key electrical specifications include a drain-source voltage (Vdss) of 600V, a maximum continuous drain current of 35A at 25°C, and a maximum on-resistance (Rds On) of 88mOhm at 17.5A and 10V. The device also has a low input capacitance and gate charge, making it suitable for efficient power conversion.
The MOSFET is housed in a TO-247-3 package and supports through-hole mounting. It operates at a maximum junction temperature of 150°C and has a total power dissipation of 255W at 25°C.
Features such as 100% avalanche tested and low gate input resistance contribute to its reliability and performance in various switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 600V.
35A at TC=25°C and 22A at TC=100°C.
Maximum 88mΩ at 17.5A and 10V gate-source voltage.
TO-247-3 through-hole package.
150°C.
130nC at Vgs = 10V.
140A.