| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,414 pcs
|
1414 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
316 pcs
|
316 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW43N60DM2 is a high-voltage N-channel Power MOSFET from the MDmesh DM2 series. It is designed for demanding high efficiency converters and bridge topologies, offering very low recovery charge and time combined with low RDS(on).
Key electrical specifications include a drain-to-source voltage (Vds) of 600V, a maximum continuous drain current (Id) of 34A at 25°C case temperature, and a maximum power dissipation (Pd) of 250W. The MOSFET features a low on-resistance of 93mΩ at 17A and 10V, a gate threshold voltage (Vgs(th)) of 5V at 250µA, and a maximum gate-source voltage (Vgs) of ±25V. Its input capacitance (Ciss) is 2500pF at 100V, and gate charge (Qg) is 56nC at 10V.
This device operates within a junction temperature range of -55°C to 150°C. It is housed in a TO-247-3 package, suitable for through-hole mounting, which provides robust mechanical support and effective heat dissipation for high power applications.
The STW43N60DM2 is suitable for various switching applications, including high efficiency converters, bridge topologies, and ZVS phase-shift converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 600V.
The maximum continuous drain current (Id) is 34A at Tc=25°C.
The maximum on-resistance (Rds(on)) is 93mOhm at 17A and 10V gate drive.
It comes in a TO-247-3 through-hole package.
The operating junction temperature range is -55°C to 150°C.
The maximum gate charge (Qg) is 56nC at 10V.
The maximum input capacitance (Ciss) is 2500pF at 100V drain-source voltage.