| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | 01+ | On Request | On Request |
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The STW40NS15 is an N-Channel MOSFET manufactured by ST, utilizing the MESH OVERLAY™ process. This device is designed for high current switching applications, including uninterruptible power supplies (UPS) and primary switches in isolated DC-DC converters.
Key electrical specifications include a drain-source voltage (Vds) of 150V, a continuous drain current (Id) of 40A at 25°C, and a maximum pulsed drain current (Idm) of 160A. The typical static drain-source on-resistance (RDS(on)) is 0.042 Ohms at a gate-source voltage (Vgs) of 10V and a drain current of 40A. The typical gate threshold voltage (Vgs(th)) is between 2V and 3V.
Thermal characteristics include a maximum total power dissipation (Ptot) of 180W at 25°C and a maximum operating junction temperature (Tj) of 175°C. The component is housed in a TO-247 package, suitable for through-hole mounting.
This MOSFET offers extremely high dv/dt capability and minimized gate charge, contributing to efficient switching performance. Its design is optimized to improve performance compared to standard parts.
The drain-source voltage (Vds) is 150V.
The continuous drain current (Id) at 25°C is 40A.
The typical static drain-source on-resistance (RDS(on)) is 0.042 Ohms.
The STW40NS15 is supplied in a TO-247 package.
The STW40NS15 is designed for high current switching, uninterruptible power supplies (UPS), and as a primary switch in isolated DC-DC converters.