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STW3N170 The STMicroelectronics STW3N170 is an N-Channel MOSFET with a 1700V drain-source voltage and 2.6A continuous drain current. It is housed in a TO-247-3 package.
Mfr Part #:

STW3N170

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STW3N170 is an N-Channel MOSFET with a 1700V drain-source voltage and 2.6A continuous drain current. It is housed in a TO-247-3 package.
✓ Total Stock: 4,261 pcs
$ Price Range: $2.56

STW3N170 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
3,121 pcs
On Request
3121 pcs On Request 1 On Request On Request On Request On Request On Request
Fe Components ✓
Non-Authorised Inventory information
1,140 pcs
On Request
1140 pcs On Request 1 On Request On Request On Request On Request On Request
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STW3N170 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STW3N170 Description

Short technical summary and product information.

The STMicroelectronics STW3N170 is a single N-Channel MOSFET designed for high voltage applications. It features a maximum drain-source voltage (Vdss) of 1700V and a continuous drain current (Id) of 2.6A at case temperature.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 13 Ohm at 1.3A and 10V gate-source voltage, and a gate charge (Qg) of 44 nC. The input capacitance (Ciss) is 1100 pF at 100V.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is mounted via through-hole technology and comes in a TO-247-3 package.

 

The STW3N170 utilizes MOSFET (Metal Oxide) technology and has a gate threshold voltage (Vgs(th)) of 5V at 250µA. The maximum gate-source voltage is ±30V.

STW3N170 Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STW3N170 N-Channel MOSFET
Subcategory: Single

STW3N170 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STW3N170 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STW3N170 Features

  • 1700V drain-source voltage rating.
  • 2.6A continuous drain current.
  • 13 Ohm maximum on-resistance.
  • TO-247-3 through-hole package.
  • Operates from -55°C to 150°C.

STW3N170 Applications

  • Suitable for high voltage power switching.
  • Used in power supply designs.
  • Applicable in motor control circuits.
  • Ideal for industrial applications.

STW3N170 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the STW3N170?

The maximum drain-to-source voltage (Vdss) is 1700V.

What is the package type of the STW3N170?

The package is TO-247-3.

What is the operating temperature range of the STW3N170?

The operating temperature range is -55°C to 150°C (junction).

What is the continuous drain current rating of the STW3N170?

The maximum continuous drain current is 2.6A at Tc.

What is the maximum on-resistance of the STW3N170?

The maximum on-resistance (Rds on) is 13 Ohm at Id=1.3A and Vgs=10V.

What is the gate charge of the STW3N170?

The maximum gate charge (Qg) is 44nC at Vgs=10V.

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