| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30 pcs
|
30 pcs | On Request | 1 | On Request | On Request | 00+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STW38NB20 is an N-Channel Power MOSFET manufactured by STMicroelectronics, utilizing the PowerMESH™ technology. It is designed for demanding applications requiring high current and high-speed switching capabilities.
Key electrical specifications include a Drain-Source Voltage (Vdss) of 200V, a continuous Drain Current (Id) of 38A at 25°C, and a maximum Power Dissipation (Ptot) of 180W at 25°C. The On-Resistance (RDS(on)) is a maximum of 0.065 Ω at 19A and 10V gate drive, contributing to efficient operation.
This MOSFET is housed in a TO-247-3 package, suitable for through-hole mounting. It offers a maximum operating junction temperature of 150°C and features a gate-source voltage rating of ±30V. The device is also tested for avalanche characteristics, providing robustness in demanding conditions.
Applications for the STW38NB20 include Switch Mode Power Supplies (SMPS) and DC-AC converters for welding equipment, uninterruptible power supplies, and motor drives. Its design emphasizes low intrinsic capacitance and minimized gate charge for improved switching performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200V maximum.
TO-247-3 through-hole package.
Storage temperature range is -65°C to 150°C, maximum junction temperature is 150°C.
Maximum on-resistance is 0.065 ohms at 19A and 10V gate drive.
Maximum gate charge is 95 nC at 10V.
Single pulse avalanche energy is 550 mJ.