| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,220 pcs
|
2220 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STW38N65M5 is an N-Channel MOSFET manufactured by STMicroelectronics. It offers a high drain-source voltage (Vdss) of 650V and a continuous drain current of 30A at a case temperature (Tc).
Key electrical characteristics include a maximum on-resistance (Rds On) of 95mOhm at 15A and 10V gate drive voltage. The gate charge (Qg) is 71nC maximum at 10V, and the input capacitance (Ciss) is 3000pF maximum at 100V.
This MOSFET is designed for through-hole mounting and comes in a TO-247-3 package. It has a maximum power dissipation of 190W (Tc) and an operating junction temperature of up to 150°C.
The STW38N65M5 is suitable for various power switching applications where high voltage and current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 650 V.
The continuous drain current is 30A.
The Rds On is 95mOhm maximum at 15A drain current and 10V gate-source voltage.
The package is TO-247-3.
The operating temperature is 150°C (TJ).
Yes, it is RoHS3 Compliant.
The MSL is 1 Unlimited.