STW36N55M5 The STMicroelectronics STW36N55M5 is an N-channel Power MOSFET designed for switching applications. It offers a 550V drain-source voltage and a continuous current rating of 33A.
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STW36N55M5

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STW36N55M5 is an N-channel Power MOSFET designed for switching applications. It offers a 550V drain-source voltage and a continuous current rating of 33A.
✓ Total Stock: 90 pcs
$ Price Range: $2.56

STW36N55M5 Available from 1 distributor

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STW36N55M5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STW36N55M5 Description

Short technical summary and product information.

The STMicroelectronics STW36N55M5 is an N-channel MDmesh™ V Power MOSFET. It is based on an innovative vertical process technology combined with STMicroelectronics’ PowerMESH™ horizontal layout structure, resulting in extremely low on-resistance.

 

Key electrical specifications include a drain-source voltage (VDSS) of 550V, a continuous drain current (ID) of 33A at 25°C, and a maximum on-resistance (Rds On) of 80mOhm at 16.5A and 10V gate-source voltage. The gate-source voltage (VGS) maximum is ±25V, and the gate threshold voltage (Vgs(th)) is 5V at 250µA. Input capacitance (Ciss) is 2950 pF at 100V, and gate charge (Qg) is 62 nC at 10V.

 

This device features a maximum power dissipation of 190W at 25°C (Tc) and an operating junction temperature up to 150°C. It is suitable for applications requiring superior power density and outstanding efficiency.

 

The STW36N55M5 is supplied in a TO-247-3 package and is designed for through-hole mounting.

STW36N55M5 Quick Information

Product Type: N-Channel Power MOSFET
Series: MDmesh™ V
Canonical Name: STMicroelectronics STW36N55M5 N-Channel Power MOSFET
Subcategory: N-Channel

STW36N55M5 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STW36N55M5 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STW36N55M5 Features

  • N-channel 550V Power MOSFET.
  • Low on-resistance: 80mOhm typical.
  • Continuous current rating of 33A.
  • TO-247 package for through-hole mounting.
  • Designed for high efficiency switching.

STW36N55M5 Applications

  • Suitable for switching applications.
  • Enables superior power density.
  • Provides outstanding efficiency.
  • Ideal for high-performance power circuits.

STW36N55M5 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the STW36N55M5?

The maximum drain-source voltage (VDSS) is 550V.

What is the continuous drain current rating of the STW36N55M5?

The continuous drain current (ID) is 33A at 25°C.

What is the typical on-resistance of the STW36N55M5?

The maximum on-resistance (Rds On) is 80mOhm at 16.5A and 10V.

What package type is the STW36N55M5 supplied in?

The STW36N55M5 is supplied in a TO-247-3 package.

What is the maximum operating temperature for the STW36N55M5?

The maximum operating junction temperature (TJ) is 150°C.

What is the RoHS status of the STW36N55M5?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the STW36N55M5?

The Moisture Sensitivity Level is 1 Unlimited.

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