| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,380 pcs
|
6380 pcs | On Request | 1 | On Request | On Request | 0917+ | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This STMicroelectronics STW35N65M5 is an N-Channel MOSFET designed for power applications. It offers a high drain-to-source voltage rating of 650V and can handle a continuous drain current of 27A at 25°C. The MOSFET exhibits a low on-resistance, with a maximum of 98mOhm at 13.5A and 10V gate drive voltage.
Key electrical characteristics include a gate charge of 83 nC (max) at 10V and an input capacitance of 3750 pF (max) at 100V. The gate threshold voltage is 5V (max) at 250µA. The device has a maximum power dissipation of 160W (Tc) and an operating temperature range up to 150°C (TJ).
Packaged in a TO-247-3, this component is designed for through-hole mounting. Its robust specifications make it suitable for various power switching and control applications where high voltage and current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the STW35N65M5 is 650V.
The continuous drain current (Id) at 25°C for the STW35N65M5 is 27A.
The maximum Rds On for the STW35N65M5 is 98mOhm when measured at 13.5A drain current and 10V gate-source voltage.
The maximum power dissipation for the STW35N65M5 is 160W (Tc).
The STW35N65M5 can operate at temperatures up to 150°C (TJ).
The STW35N65M5 is supplied in a TO-247-3 package.
The STW35N65M5 is designed for through-hole mounting.