Mfr Part #:

STW35N60DM2

The STW35N60DM2 is an N-channel Power MOSFET from STMicroelectronics, rated for 600V and 28A. It features a low on-resistance and is housed in a TO-247 package.

✓ Total Stock: 9,992 pcs

$ Price Range: $2.56

STW35N60DM2 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	8,756 pcs On Request	8756 pcs	On Request	1	On Request	On Request	18+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	1,236 pcs On Request	1236 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

STW35N60DM2 Description

Short technical summary and product information.

The STMicroelectronics STW35N60DM2 is a high voltage N-channel Power MOSFET belonging to the MDmesh™ DM2 fast recovery diode series. It is designed for switching applications and offers a breakdown voltage of 600V.

Key electrical characteristics include a maximum continuous drain current of 28A at 25°C case temperature and a maximum on-resistance of 110mΩ at 14A and 10V gate-source voltage. The device also features a typical on-resistance of 0.094Ω. Its gate charge is specified at 54 nC maximum at 10V, and input capacitance is 2400 pF maximum at 100V.

With a maximum power dissipation of 210W at 25°C case temperature, the STW35N60DM2 operates within a junction temperature range of -55°C to 150°C. It is suitable for demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters due to its low recovery charge and time.

The MOSFET is packaged in a TO-247-3 case and utilizes through-hole mounting. It is designed for applications requiring high voltage switching capabilities and efficient power conversion.

STW35N60DM2 Quick Information

Product Type: N-channel Power MOSFET

Series: MDmesh™ DM2

Canonical Name: STW35N60DM2 N-channel 600 V Power MOSFET

Subcategory: N-Channel

STW35N60DM2 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

STW35N60DM2 Estimated Pricing

Qty	Low	High
1+	$2.56	$2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STW35N60DM2 Features

600V drain-source breakdown voltage.
28A maximum continuous drain current.
110mOhm maximum on-resistance.
TO-247 package for through-hole mounting.
Fast-recovery body diode included.

STW35N60DM2 Applications

Suitable for switching applications.
Ideal for high efficiency converters.
Used in bridge topologies.
Applicable for ZVS phase-shift converters.

STW35N60DM2 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage?

600V minimum.

What is the package type?

TO-247-3 through-hole package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What is the maximum gate-source voltage?

±25V.

What is the continuous drain current rating?

28A at 25°C case temperature.

What is the maximum on-resistance?

110mOhm at 14A, 10V gate drive.

What is the total gate charge?

54nC at 10V gate voltage.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	STMicroelectronics
Current	28A (Tc)
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2400 pF @ 100 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	210W (Tc)
Rds On (Max) @ Id, Vgs	110mOhm
Storage Temperature	-55 to 150 °C
Supplier Device Package	TO-247-3
Supplier Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±25 V
Vgs(th) (Max) @ Id	5V @ 250µA