| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,400 pcs
|
8400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
7,964 pcs
|
7964 pcs | On Request | 1 | On Request | On Request | 1042+ | On Request | On Request | |
|
1,086 pcs
|
1086 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STW34NM60ND is a high-performance N-Channel MOSFET manufactured by STMicroelectronics. This component is designed for demanding power applications, featuring a robust 600V drain-to-source voltage rating and a continuous drain current capability of 29A at a specific case temperature.
Key electrical characteristics include a maximum on-resistance of 110mOhm at 14.5A and 10V gate-source voltage, and a gate charge of 80.4nC. The MOSFET operates within a temperature range of -55°C to 150°C (TJ).
Packaged in a TO-247-3 through-hole configuration, the STW34NM60ND is suitable for various power switching and control circuits. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles, providing efficient power management capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 600V.
The continuous drain current is 29A at case temperature (Tc).
The maximum on-resistance (Rds On) is 110mOhm at 14.5A drain current and 10V gate-source voltage.
The STW34NM60ND is housed in a TO-247-3 through-hole package.
The maximum operating junction temperature (TJ) is 150°C.
The maximum gate threshold voltage is 5V at 250µA drain current.
The maximum power dissipation is 190W at case temperature (Tc).