| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,180 pcs
|
3180 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,200 pcs
|
1200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
64 pcs
|
64 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW33N60DM2 is a high voltage N-channel Power MOSFET from the MDmesh™ DM2 fast recovery diode series. It offers a drain-source voltage (Vds) of 600V and a continuous drain current (Tc) of 24A. The MOSFET has a low on-resistance of 130mOhm at 12A and 10V, and a gate charge (Qg) of 43nC at 10V.
This device is suitable for demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Key features include a fast-recovery body diode, extremely low gate charge and input capacitance, and 100% avalanche tested. The STW33N60DM2 is housed in a TO-247-3 package and supports through-hole mounting.
With a maximum power dissipation of 190W (Tc) and an operating temperature range of -55°C to 150°C (TJ), this MOSFET is designed for robust performance in switching applications. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the STW33N60DM2 is 600V.
The STW33N60DM2 has a continuous drain current of 24A at 25°C (Tc).
The maximum on-resistance (Rds On) for the STW33N60DM2 is 130mOhm when tested at 12A and 10V.
The STW33N60DM2 operates between -55°C and 150°C (TJ).
The STW33N60DM2 is supplied in a TO-247-3 package.
The RoHS Status for the STW33N60DM2 is listed as RoHS3 Compliant.