STW33N60DM2 The STMicroelectronics STW33N60DM2 is a 600V N-channel Power MOSFET designed for high efficiency converters. It features a TO-247 package and low on-resistance.
Mfr Part #:

STW33N60DM2

Available from 3 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STW33N60DM2 is a 600V N-channel Power MOSFET designed for high efficiency converters. It features a TO-247 package and low on-resistance.
✓ Total Stock: 4,444 pcs
$ Price Range: $2.56

STW33N60DM2 Available from 3 distributors

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3,180 pcs
3180 pcs On Request 1 On Request On Request On Request On Request On Request
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1,200 pcs
1200 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16
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64 pcs
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STW33N60DM2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STW33N60DM2 Description

Short technical summary and product information.

The STMicroelectronics STW33N60DM2 is a high voltage N-channel Power MOSFET from the MDmesh™ DM2 fast recovery diode series. It offers a drain-source voltage (Vds) of 600V and a continuous drain current (Tc) of 24A. The MOSFET has a low on-resistance of 130mOhm at 12A and 10V, and a gate charge (Qg) of 43nC at 10V.

 

This device is suitable for demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Key features include a fast-recovery body diode, extremely low gate charge and input capacitance, and 100% avalanche tested. The STW33N60DM2 is housed in a TO-247-3 package and supports through-hole mounting.

 

With a maximum power dissipation of 190W (Tc) and an operating temperature range of -55°C to 150°C (TJ), this MOSFET is designed for robust performance in switching applications. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles.

STW33N60DM2 Quick Information

Product Type: Power MOSFET
Series: MDmesh™ DM2
Canonical Name: STMicroelectronics STW33N60DM2 N-Channel 600V 24A Power MOSFET
Subcategory: N-Channel

STW33N60DM2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STW33N60DM2 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STW33N60DM2 Features

  • 600V drain-source voltage rating.
  • 24A continuous drain current.
  • 130mOhm maximum on-resistance.
  • Low gate charge and input capacitance.
  • TO-247 package for through-hole mounting.

STW33N60DM2 Applications

  • Suitable for high efficiency converters.
  • Ideal for bridge topologies.
  • Used in ZVS phase-shift converters.
  • Designed for switching applications.

STW33N60DM2 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the STW33N60DM2?

The maximum drain-source voltage (Vds) for the STW33N60DM2 is 600V.

What is the continuous drain current of the STW33N60DM2?

The STW33N60DM2 has a continuous drain current of 24A at 25°C (Tc).

What is the on-resistance of the STW33N60DM2?

The maximum on-resistance (Rds On) for the STW33N60DM2 is 130mOhm when tested at 12A and 10V.

What is the operating temperature range for this MOSFET?

The STW33N60DM2 operates between -55°C and 150°C (TJ).

What package type is the STW33N60DM2 supplied in?

The STW33N60DM2 is supplied in a TO-247-3 package.

Is the STW33N60DM2 RoHS compliant?

The RoHS Status for the STW33N60DM2 is listed as RoHS3 Compliant.

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