| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
65 pcs
|
65 pcs | On Request | 1 | On Request | On Request | 16+PB | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW32NM50N is a single N-Channel MOSFET belonging to the discrete semiconductor product category. This component is built using MOSFET (Metal Oxide) technology and is designed for robust performance in power applications.
Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 500V and a continuous current rating of 22A at the case temperature (Tc). The device exhibits a maximum on-resistance (Rds On) of 130mOhm at 11A and 10V Vgs, with a maximum gate charge (Qg) of 62.5nC at 10V Vgs. Its input capacitance (Ciss) is rated at 1973pF at 50V Vds. The MOSFET operates within a junction temperature range of 150°C.
Packaged in a TO-247-3 configuration, the STW32NM50N is designed for through-hole mounting. It has a maximum power dissipation of 190W at the case temperature. The gate-to-source voltage (Vgs) maximum is ±25V, and the gate threshold voltage (Vgs(th)) is 4V at 250µA.
This MOSFET is suitable for various power switching and control applications where high voltage and current handling capabilities are required. Its through-hole mounting makes it suitable for integration into power supply circuits, motor control, and other industrial applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 500V.
The continuous drain current is 22A at case temperature (Tc).
The maximum on-resistance (Rds on) is 130mOhm at Id=11A and Vgs=10V.
The device is housed in a TO-247-3 through-hole package.
The maximum junction temperature is 150°C.
The maximum gate threshold voltage (Vgs(th)) is 4V at Id=250µA.
The maximum power dissipation is 190W at case temperature (Tc).