| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
220 pcs
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220 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW32N65M5 is a single N-Channel MOSFET designed for power switching applications. It features a high drain-source voltage rating of 650V and a continuous drain current capability of 24A at a case temperature of Tc.
Key electrical characteristics include a maximum on-resistance of 119mOhm at 12A and 10V, an input capacitance (Ciss) of 3320pF at 100V, and a gate charge (Qg) of 72nC at 10V. The gate threshold voltage (Vgs(th)) is 5V at 250µA, and the maximum gate-to-source voltage is ±25V.
This MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 150W (Tc). It is constructed using MOSFET (Metal Oxide) technology.
The STW32N65M5 is packaged in a TO-247-3 case and utilizes through-hole mounting. It is specified as RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The STW32N65M5 is rated for a maximum drain-source voltage of 650V.
The continuous drain current is 24A at case temperature.
The STW32N65M5 comes in a TO-247-3 package with through-hole mounting.
The maximum junction temperature is 150°C.
The maximum gate-threshold voltage is 5V at 250µA drain current.
The maximum on-resistance is 119mΩ at 12A drain current and 10V gate drive.
The maximum gate charge is 72nC at 10V gate-source voltage.