| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,400 pcs
|
2400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
700 pcs
|
700 pcs | On Request | 1 | On Request | On Request | 1921+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STW31N65M5 is an N-Channel Power MOSFET from STMicroelectronics, rated for a drain-to-source voltage of 650V and a continuous drain current of 22A at 25°C. This device features a maximum on-resistance of 148 mOhm at 11A and 10V gate drive, making it suitable for high-voltage switching applications. The gate threshold voltage is a maximum of 5V at 250µA drain current, and the total gate charge is 45 nC at 10V. The input capacitance is 816 pF at 100V. The device is housed in a TO-247-3 through-hole package, rated for a maximum operating junction temperature of 150°C. Maximum power dissipation is 150W. The MOSFET supports a maximum gate-source voltage of ±25V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V
22A
148 mOhm at 11A, 10V
TO-247-3 through-hole package
150°C