| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,750 pcs
|
5750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
30 pcs
|
30 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STW30NM60ND is an N-channel power MOSFET manufactured by STMicroelectronics. It is rated for a maximum drain-to-source voltage of 600V and a continuous drain current of 25A at case temperature. The device offers a maximum on-resistance of 130mΩ at 12.5A drain current and 10V gate-source voltage.
Designed for high-voltage power switching, the STW30NM60ND has a maximum gate charge of 100nC at 10V and input capacitance of 2800pF at 50V. Maximum power dissipation is 190W at case temperature, with an operating junction temperature up to 150°C.
The MOSFET is supplied in a TO-247-3 through-hole package and accepts a maximum gate-source voltage of ±25V. The gate threshold voltage is specified at 5V maximum at 250µA drain current.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 600 V.
The maximum continuous drain current is 25A at case temperature.
The maximum on-resistance is 130mΩ at 12.5A drain current and 10V gate-source voltage.
The STW30NM60ND is available in a TO-247-3 through-hole package.
The maximum operating junction temperature is 150°C.
The maximum gate charge is 100 nC at 10V gate-source voltage.
The maximum gate-source voltage is ±25V.