| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,985 pcs
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7985 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW30NM50N is a 500V N-Channel Power MOSFET from the MDmesh™ II series. This device is designed using advanced technology to provide low on-resistance and gate charge, making it suitable for high-efficiency converters.
Key electrical specifications include a maximum drain-source voltage of 500V, a continuous drain current of 27A at 25°C, and a maximum on-resistance of 115mOhm at 13.5A and 10V gate-source voltage. The input capacitance is 2740 pF at 50V, and the gate charge is a maximum of 94 nC at 10V.
With a maximum power dissipation of 190W at 25°C, this MOSFET is suitable for demanding applications. It operates at junction temperatures up to 150°C and has a storage temperature range of -55°C to 150°C.
The STW30NM50N is packaged in a TO-247-3 through-hole configuration, designed for robust thermal performance and ease of mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the STW30NM50N is 500V.
The STW30NM50N has a continuous drain current of 27A at 25°C.
The maximum on-resistance for the STW30NM50N is 115mOhm when measured at 13.5A drain current and 10V gate-source voltage.
The STW30NM50N is supplied in a TO-247-3 package.
The maximum operating junction temperature for the STW30NM50N is 150°C.
The STW30NM50N is listed as RoHS3 Compliant.