| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
213 pcs
|
213 pcs | On Request | 1 | On Request | On Request | 1331+ | On Request | On Request | |
|
113 pcs
|
113 pcs | On Request | 1 | On Request | On Request | 1331+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW28NM60ND is an N-channel power MOSFET from the FDmesh II family, utilizing MDmesh technology. It is designed for high-performance switching applications, offering superior switching characteristics and low on-resistance.
Key electrical specifications include a maximum drain-source voltage of 600V, a continuous drain current of 23A at 25°C, and a maximum on-resistance of 150mOhm at 11.5A and 10V gate drive. The device features a gate-source voltage range of ±25V and a gate threshold voltage of 5V at 250µA. Input capacitance is rated at 2090pF at 100V, with a gate charge of 62.5nC at 10V.
With a maximum power dissipation of 190W at 25°C and an operating junction temperature up to 150°C, this MOSFET is suitable for demanding thermal environments. It is housed in a TO-247-3 package, designed for through-hole mounting.
This MOSFET is ideal for applications such as bridge topologies and ZVS phase-shift converters, benefiting from its intrinsic fast-recovery body diode and 100% avalanche tested rating.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600V.
The continuous drain current is 23A at 25°C.
The maximum on-resistance is 150mOhm at 11.5A and 10V gate drive.
It is supplied in a TO-247-3 package.
The maximum operating junction temperature is 150°C.
The gate charge is a maximum of 62.5 nC at 10V.