| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,490 pcs
|
9490 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,340 pcs
|
1340 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STW28N65M2 is an N-Channel MOSFET manufactured by STMicroelectronics. It features a maximum drain-to-source voltage of 650V and a continuous drain current rating of 20A. The device is housed in a TO247 through-hole package, which provides efficient thermal management for high-power applications.
This MOSFET is designed for high-voltage switching applications such as switch-mode power supplies, DC-DC converters, and motor control circuits. Its 650V rating makes it suitable for systems operating from rectified AC mains or high-voltage DC buses.
The TO247 package allows for easy mounting on heatsinks and is widely used in industrial and consumer power electronics. The part is a single N-channel enhancement-mode device, offering reliable performance in demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 650 V.