| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,250 pcs
|
2250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
306 pcs
|
306 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW28N60DM2 is a high voltage N-channel Power MOSFET from the MDmesh DM2 fast recovery diode series. It offers a 600V drain-to-source voltage (Vds) and a maximum continuous drain current (Id) of 21A at 25°C case temperature.
This MOSFET boasts a low on-resistance of 160mOhm at 10.5A and 10V Vgs, along with extremely low gate charge and input capacitance. It is designed for demanding high efficiency converters, making it suitable for bridge topologies and ZVS phase-shift converters.
Key features include a fast-recovery body diode, 100% avalanche tested, and extremely high dv/dt ruggedness. The device is housed in a TO-247-3 package and is suitable for through-hole mounting.
With a maximum power dissipation of 170W at 25°C case temperature and an operating temperature range of -55°C to 150°C, the STW28N60DM2 is built for robust performance in switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the STW28N60DM2 is 600 V.
The STW28N60DM2 has a maximum continuous drain current (Id) of 21A at a case temperature of 25°C.
The maximum on-resistance (Rds On) for the STW28N60DM2 is 160mOhm when measured at 10.5A drain current and 10V gate-source voltage.
The operating junction temperature range for the STW28N60DM2 is -55°C to 150°C.
The STW28N60DM2 is supplied in a TO-247-3 package.