| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,299 pcs
|
6299 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request | |
|
4,500 pcs
|
4500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,420 pcs
|
3420 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,500 pcs
|
1500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STW26NM50 is an N-Channel MOSFET from STMicroelectronics designed for high-voltage applications. It features a drain-source voltage rating of 500V and a continuous drain current of 30A. The device has a maximum on-resistance of 120mOhm at 13A and 10V gate drive. Gate charge is 106nC and input capacitance is 3000pF. The MOSFET is capable of dissipating up to 313W. It is housed in a TO-247-3 through-hole package and operates at junction temperatures up to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V.
TO-247-3 through-hole package.
150°C junction temperature.
30A.
120mOhm at 13A, 10V.
106nC at 10V.
3000pF at 25V.