STW25NM60N The STMicroelectronics STW25NM60N is an N-Channel MOSFET designed for power applications. It features a 600V drain-source voltage and a continuous drain current of 21A.
Mfr Part #:

STW25NM60N

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STW25NM60N is an N-Channel MOSFET designed for power applications. It features a 600V drain-source voltage and a continuous drain current of 21A.
✓ Total Stock: 13,820 pcs
$ Price Range: $2.56

STW25NM60N Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,320 pcs
7320 pcs On Request 1 On Request On Request 15+ On Request On Request
Non-Authorised Inventory information
6,500 pcs
6500 pcs On Request 1 On Request On Request On Request On Request On Request

STW25NM60N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STW25NM60N Description

Short technical summary and product information.

The STMicroelectronics STW25NM60N is an N-Channel MOSFET with a 600V drain-to-source voltage rating and a continuous drain current of 21A at 25°C. This device offers a maximum power dissipation of 160W (Tc) and a low on-resistance of 160mOhm at 10.5A and 10V gate drive voltage.

 

Featuring a TO-247-3 package, the STW25NM60N is suitable for through-hole mounting. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles. The maximum gate-source voltage is ±25V, with a gate threshold voltage of 4V at 250µA.

 

Key electrical characteristics include an input capacitance (Ciss) of 2400pF at 50V and a gate charge (Qg) of 84nC at 10V. The operating temperature range is up to 150°C (TJ). This MOSFET is designed for various power switching applications where high voltage and current handling are required.

STW25NM60N Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STW25NM60N N-Channel MOSFET
Subcategory: N-Channel

STW25NM60N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STW25NM60N Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STW25NM60N Features

  • N-Channel MOSFET technology.
  • 600V drain-to-source voltage.
  • 21A continuous drain current.
  • 160W maximum power dissipation.
  • TO-247-3 through-hole package.

STW25NM60N Applications

  • Used in high-voltage power supplies.
  • Suitable for power factor correction.
  • Ideal for switch-mode power converters.
  • Applied in motor drive circuits.

STW25NM60N FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage (Vdss) for the STW25NM60N?

The drain-to-source voltage (Vdss) is 600V.

What is the continuous drain current (Id) for the STW25NM60N?

The continuous drain current (Id) is 21A (Tc).

What is the maximum power dissipation for the STW25NM60N?

The maximum power dissipation is 160W (Tc).

What is the operating temperature range for the STW25NM60N?

The operating temperature is 150°C (TJ).

What package type is the STW25NM60N available in?

The STW25NM60N is available in a TO-247-3 package.

What is the RoHS status of the STW25NM60N?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the STW25NM60N?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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