| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,480 pcs
|
3480 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This STMicroelectronics STW25N80K5 is an N-Channel MOSFET designed for power applications. It features a high drain-source voltage rating of 800V and can handle a continuous drain current of 19.5A at the case temperature.
The MOSFET has a maximum power dissipation of 250W (Tc) and an operating temperature range of -55°C to 150°C (TJ). Key electrical characteristics include a gate threshold voltage of 5V at 100µA and a maximum gate-to-source voltage of ±30V. The input capacitance (Ciss) is 1600 pF @ 100V, and the gate charge (Qg) is 40 nC @ 10V.
With an on-resistance (Rds On) of 260mOhm at 19.5A and 10V, this component is suitable for various switching applications. It utilizes MOSFET (Metal Oxide) technology.
The STW25N80K5 is supplied in a TO-247-3 package and features through-hole mounting. Its RoHS status is listed as RoHS3 Compliant, Moisture Sensitivity Level (MSL) is 1, and REACH status is Unaffected, though these compliance details are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 800 V.
The maximum continuous drain current is 19.5A.
The package type is TO-247-3.
It is designed for through-hole mounting.
The operating temperature range is -55°C to 150°C (TJ).