| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,059 pcs
|
1059 pcs | On Request | 1 | On Request | On Request | 08+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW24NM65N is an N-Channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (Vdss) of 650V and a continuous drain current of 19A at a case temperature of Tc.
Key electrical characteristics include a maximum on-resistance (Rds On) of 190mOhm at 9.5A and 10V gate-source voltage. The gate charge (Qg) is 70nC maximum at 10V, and the input capacitance (Ciss) is 2500pF maximum at 50V. The gate threshold voltage (Vgs(th)) is 4V maximum at 250µA, with a maximum gate-source voltage of ±25V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is constructed using MOSFET technology and is suitable for through-hole mounting. The component comes in a TO-247-3 package.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 650 V.
The continuous drain current is 19A (Tc).
The maximum on-resistance is 190mOhm at 9.5A, 10V.
The operating temperature range is -55°C to 150°C (TJ).
It is in a TO-247-3 package.
It is a through-hole mounting type.
Yes, it is RoHS3 Compliant.