| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
37 pcs
|
37 pcs | On Request | 1 | On Request | On Request | 1042+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW24NM60N is an N-channel Power MOSFET utilizing MDmesh™ II technology. It is designed for high efficiency converters and demanding switching applications.
Key electrical specifications include a maximum drain-source voltage of 600V and a continuous drain current of 17A at 25°C. The device features a low on-resistance of 190mOhm maximum at 8A and 10V gate drive, with a gate charge of 46nC maximum at 10V. Input capacitance is rated at 1400pF maximum at 50V.
This MOSFET operates within a temperature range of -55°C to 150°C. It is housed in a TO-247-3 package and supports through-hole mounting. The maximum power dissipation is 125W at 25°C.
Features include 100% avalanche tested, low input capacitance, and low gate charge, making it suitable for high efficiency converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
TO-247-3.
-55°C to 150°C (junction).
17A at Tc=25°C.
190mOhm maximum at 8A, 10V.
4V maximum at 250µA.
46nC at 10V.