STW24N60DM2 N-Channel power MOSFET from STMicroelectronics featuring a 600V drain-source voltage rating and 18A continuous drain current. Ideal for high-efficiency switching applications.
Mfr Part #:

STW24N60DM2

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
N-Channel power MOSFET from STMicroelectronics featuring a 600V drain-source voltage rating and 18A continuous drain current. Ideal for high-efficiency switching applications.
✓ Total Stock: 1,260 pcs
$ Price Range: $2.56

STW24N60DM2 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,200 pcs
1200 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
60 pcs
60 pcs On Request 1 On Request On Request 19+ On Request On Request

STW24N60DM2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STW24N60DM2 Description

Short technical summary and product information.

The STW24N60DM2 is an N-Channel enhancement-mode power MOSFET manufactured by STMicroelectronics using advanced MOSFET technology. Designed for high-voltage switching applications, this device features a maximum drain-to-source voltage of 600V and a continuous drain current of 18A at case temperature. The on-resistance is a maximum of 200 milliohms at 9A drain current and 10V gate drive.

 

Key electrical characteristics include a gate threshold voltage of 5V at 250µA drain current, gate charge of 29 nanocoulombs at 10V, and input capacitance of 1055 picofarads at 100V drain-to-source voltage. The device can dissipate up to 150W of power at case temperature. The operating junction temperature range is -55°C to 150°C.

 

The MOSFET is housed in a TO-247-3 through-hole package, which provides excellent thermal performance and ease of mounting on printed circuit boards. This package is suitable for power applications requiring high current and voltage handling.

 

The STW24N60DM2 is ideal for switch-mode power supplies, DC-DC converters, inverters, and other power conversion circuits that demand high efficiency and reliable performance. Its low gate charge and fast switching characteristics enable reduced switching losses.

STW24N60DM2 Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STW24N60DM2 N-Channel Power MOSFET, 600V, 18A, TO-247-3
Subcategory: Power MOSFET

STW24N60DM2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STW24N60DM2 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STW24N60DM2 Features

  • N-Channel MOSFET with 600V drain-source voltage.
  • Continuous drain current of 18 amperes.
  • Low on-resistance of 200 milliohms.
  • Gate charge of 29 nanocoulombs at 10V.
  • Through-hole mounting in TO-247 package.

STW24N60DM2 Applications

  • Used in switch-mode power supplies.
  • Suitable for DC-DC converters and inverters.
  • Ideal for high-voltage switching circuits.
  • Applicable in motor control systems.

STW24N60DM2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage?

600V.

What package type is this MOSFET?

TO-247-3.

What is the operating temperature range?

-55°C to 150°C (junction).

What is the typical on-resistance?

Maximum 200 milliohms at 9A drain current and 10V gate voltage.

What gate drive voltage is recommended?

10V.

What is the maximum continuous drain current?

18A at case temperature.

What is the gate charge?

29 nC at 10V gate voltage.

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