| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
365 pcs
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365 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW23NM60ND is an N-channel power MOSFET utilizing advanced FDmesh™ II technology. It is designed for high-performance switching applications, offering a drain-source voltage of 600V and a continuous drain current of 19.5A at 25°C.
Key electrical characteristics include a maximum on-resistance of 180mΩ at 10A and 10V, an input capacitance of 2050pF at 50V, and a gate charge of 70nC at 10V. The device operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 150W.
This MOSFET is housed in a TO-247-3 package and features through-hole mounting. Its robust design includes high dv/dt and avalanche capabilities, making it suitable for demanding applications.
The STW23NM60ND is ideal for bridge topologies and ZVS phase-shift converters, providing superior switching performance and low on-resistance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage is 600 V.
The continuous drain current is 19.5A at a case temperature of 25°C.
The maximum on-resistance is 180mOhm when tested at 10A drain current and 10V gate-source voltage.
The operating temperature range is up to 150°C (TJ).
The STW23NM60ND is supplied in a TO-247-3 package.
The STW23NM60ND is mounted using the through-hole method.