| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
750 pcs
|
750 pcs | On Request | 1 | On Request | On Request | 816 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW23NM60N is a high-performance N-Channel MOSFET. It is designed with a 600V drain-source voltage (Vdss) and can handle a continuous drain current of 19A at 25°C.
Key electrical characteristics include a maximum Rds On of 180mOhm at 9.5A and 10V gate drive voltage. The gate threshold voltage (Vgs(th)) is 4V maximum at 250µA, and the maximum gate charge (Qg) is 60nC at 10V. Input capacitance (Ciss) is rated at 2050pF at 50V.
This MOSFET utilizes MOSFET (Metal Oxide) technology and operates at a maximum junction temperature of 150°C. It has a power dissipation rating of 150W (Tc).
The STW23NM60N is packaged in a TO-247-3 case and features through-hole mounting. Its maximum gate-source voltage (Vgs) is ±25V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 600 V.
The continuous drain current (Id) is 19 A at 25°C.
The maximum Rds On is 180 mOhm at 9.5A and 10V.
The package type is TO-247-3.
It is mounted using the through-hole method.
The operating temperature is up to 150°C (TJ).
The maximum gate charge (Qg) is 60 nC at 10V.