| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,579 pcs
|
7579 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
|
400 pcs
|
400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW23NM50N is an N-Channel Power MOSFET from the MDmesh II family, built using advanced technology for high efficiency converters. This device is rated for a drain-source voltage of 500V and a continuous drain current of 17A at 25°C.
Key electrical characteristics include a maximum on-resistance of 190mOhm at 8.5A and 10V gate drive, a gate charge of 45nC at 10V, and an input capacitance of 1330pF at 50V. The MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 125W at 25°C.
Packaged in a TO-247-3 through-hole configuration, the STW23NM50N is suitable for demanding high efficiency switching applications. Its design focuses on low input capacitance and gate charge, contributing to its efficiency.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V.
TO-247-3, through-hole mounting.
150°C.