| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
700 pcs
|
700 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW23N80K5 is a high-performance N-Channel MOSFET. It features a maximum Drain to Source Voltage (Vdss) of 800V and a continuous drain current of 16A (Tc). The device has a low on-resistance of 280mOhm at 8A and 10V, contributing to efficient power handling with a maximum power dissipation of 190W (Tc).
Operating within a temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for demanding applications. It utilizes MOSFET technology and comes in a Through Hole mounting type within a TO-247-3 package. The gate charge (Qg) is 33 nC at 10V, and input capacitance (Ciss) is 1000 pF at 100V.
This component is ideal for power switching and control circuits where high voltage and current capabilities are required. Its robust construction and specified electrical characteristics make it a reliable choice for various industrial and electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
TO-247-3.
-55°C to 150°C (junction temperature).
16A at case temperature.
280mOhm maximum at 8A and 10V gate drive.
33nC at 10V.
1000pF at 100V drain-source voltage.