| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Failure Rate | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW21NM60ND is a high-performance N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 17A at 25°C (Tc).
Key electrical characteristics include a maximum on-resistance (Rds On) of 220mOhm at 8.5A and 10V, a gate threshold voltage (Vgs(th)) of 5V at 250µA, and a maximum gate charge (Qg) of 60 nC at 10V. The device operates within a temperature range of 150°C (TJ) and has a maximum power dissipation of 140W (Tc).
This MOSFET is housed in a TO-247-3 package and is designed for through-hole mounting. Its specifications make it suitable for power switching and control applications where high voltage and current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) for the STW21NM60ND is 600V.
The continuous drain current (Id) for the STW21NM60ND is 17A at 25°C (Tc).
The maximum power dissipation (Pd) for the STW21NM60ND is 140W (Tc).
The Rds On (Max) for the STW21NM60ND is 220mOhm at 8.5A, 10V.
The operating temperature range (TJ) for the STW21NM60ND is 150°C.
The STW21NM60ND is supplied in a TO-247-3 package.