STW21NM60N The STW21NM60N is an N-Channel Power MOSFET from STMicroelectronics. It offers a 600V drain-source voltage and 17A continuous current capability.
Mfr Part #:

STW21NM60N

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STW21NM60N is an N-Channel Power MOSFET from STMicroelectronics. It offers a 600V drain-source voltage and 17A continuous current capability.
✓ Total Stock: 29,290 pcs
$ Price Range: $2.56

STW21NM60N Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
27,090 pcs
27090 pcs On Request 1 On Request On Request 1132 On Request On Request
Non-Authorised Inventory information
2,200 pcs
2200 pcs On Request 1 On Request On Request 0806+ On Request On Request

STW21NM60N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STW21NM60N Description

Short technical summary and product information.

The STMicroelectronics STW21NM60N is a second-generation MDmesh™ Power MOSFET designed for high efficiency switching applications. This N-channel MOSFET features a 600V drain-source voltage and a maximum continuous drain current of 17A at 25°C case temperature. Its on-resistance (Rds On) is rated at a maximum of 220mOhm at 8.5A and 10V gate drive voltage.

 

Key electrical characteristics include a gate threshold voltage of 4V at 250µA and a maximum gate-source voltage of ±25V. The input capacitance (Ciss) is 1900pF at 50V, and the gate charge (Qg) is 66nC at 10V.

 

With a maximum power dissipation of 140W at 25°C case temperature and an operating junction temperature up to 150°C, this MOSFET is suitable for demanding applications. It is housed in a TO-247-3 package and is designed for through-hole mounting.

STW21NM60N Quick Information

Product Type: MOSFET
Canonical Name: STW21NM60N N-Channel Power MOSFET
Subcategory: N-Channel

STW21NM60N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STW21NM60N Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STW21NM60N Features

  • 600V drain-source voltage rating.
  • 17A continuous drain current.
  • Low 220mOhm maximum Rds On.
  • TO-247-3 package for through-hole mounting.
  • MDmesh™ second generation technology.

STW21NM60N Applications

  • 用于高效率电源转换器设计
  • 适用于AC-DC开关电源
  • 用于DC-DC升压变换器
  • 用于电机驱动控制电路
  • 用于功率因数校正电路

STW21NM60N FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the STW21NM60N?

The maximum drain-source voltage (Vdss) for the STW21NM60N is 600V.

What is the continuous drain current of the STW21NM60N?

The STW21NM60N has a continuous drain current of 17A at a case temperature of 25°C.

What is the maximum on-resistance (Rds On) for this MOSFET?

The maximum Rds On for the STW21NM60N is 220mOhm when tested at 8.5A and 10V.

What is the operating temperature range for the STW21NM60N?

The STW21NM60N can operate at a maximum junction temperature of 150°C.

What package type is the STW21NM60N supplied in?

The STW21NM60N is supplied in a TO-247-3 package.

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