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STW21NM50N The STMicroelectronics STW21NM50N is an N-Channel MOSFET with a 500V drain-source voltage and 18A continuous drain current. It features a low on-resistance of 190mOhm at 9A, 10V and is housed in a TO-247-3 package.
Mfr Part #:

STW21NM50N

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STW21NM50N is an N-Channel MOSFET with a 500V drain-source voltage and 18A continuous drain current. It features a low on-resistance of 190mOhm at 9A, 10V and is housed in a TO-247-3 package.
✓ Total Stock: 9,894 pcs
$ Price Range: $2.56

STW21NM50N Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
9,894 pcs
On Request
9894 pcs On Request 1 On Request On Request 15+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

STW21NM50N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STW21NM50N Description

Short technical summary and product information.

This STMicroelectronics STW21NM50N is a second-generation MDmesh™ Power MOSFET designed for high efficiency switching applications. It offers a 500V drain-source voltage and a continuous drain current of 18A at 25°C case temperature.

 

The MOSFET boasts a low on-resistance of 190mOhm maximum at 9A and 10V gate-source voltage, along with a low gate charge of 65 nC maximum at 10V. Its input capacitance is rated at 1950 pF maximum at 25V.

 

With a maximum power dissipation of 140W at 25°C case temperature and an operating temperature range of -55°C to 150°C, this device is suitable for demanding applications. It is supplied in a TO-247-3 package suitable for through-hole mounting.

 

The device is 100% avalanche tested and features low input capacitance and gate charge, making it ideal for high efficiency converters.

STW21NM50N Quick Information

Product Type: MOSFET
Series: MDmesh™ II
Canonical Name: STMicroelectronics STW21NM50N N-Channel Power MOSFET
Subcategory: Single FETs, MOSFETs

STW21NM50N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STW21NM50N Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STW21NM50N Features

  • N-Channel 500V 18A MOSFET
  • Low on-resistance: 190mOhm max
  • Low gate charge: 65 nC max
  • TO-247-3 through-hole package
  • Suitable for high efficiency converters

STW21NM50N Applications

  • Switching power supplies and converters.
  • Motor control and inverter circuits.
  • High-voltage DC-DC converters.
  • Power factor correction circuits.

STW21NM50N FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the STW21NM50N?

The drain-source voltage (Vdss) is 500V.

What package does the STW21NM50N come in?

The STW21NM50N is offered in a TO-247-3 through-hole package.

What is the maximum operating junction temperature of the STW21NM50N?

The maximum operating junction temperature is 150°C.

What is the continuous drain current rating of the STW21NM50N?

The continuous drain current is 18A at 25°C case temperature.

What is the on-resistance of the STW21NM50N?

The maximum on-resistance (Rds on) is 0.19Ω at 9A and 10V gate drive.

What is the gate threshold voltage of the STW21NM50N?

The maximum gate threshold voltage (Vgs(th)) is 4V at 250µA drain current.

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