| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,425 pcs
|
6425 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW21N65M5 is an N-channel MDmesh™ V Power MOSFET designed for high-efficiency switching applications. It offers a 650V drain-source voltage (Vdss) and a continuous drain current of 17A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 190mOhm at 8.5A and 10V gate drive, and a gate-source threshold voltage (Vgs(th)) of 5V at 250µA. The device supports a maximum gate-source voltage of ±25V and has an input capacitance (Ciss) of 1950pF at 100V.
With a maximum power dissipation of 125W at 25°C case temperature and an operating junction temperature up to 150°C, this MOSFET is suitable for demanding power applications. It is housed in a TO-247-3 package and utilizes through-hole mounting.
This MOSFET is built using STMicroelectronics' proprietary vertical process technology combined with their PowerMESH™ horizontal layout, resulting in extremely low on-resistance for superior power density and efficiency.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
TO-247-3.
150°C.
190mOhm maximum at 8.5A and 10V gate drive.
50nC maximum at 10V gate voltage.
17A at 25°C case temperature.
1950pF at 100V drain-source voltage.