| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,950 pcs
|
3950 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
|
3,250 pcs
|
3250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,340 pcs
|
2340 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This STMicroelectronics STW20NM60FD is an N-Channel MOSFET with a drain-to-source voltage (Vdss) of 600V and a continuous drain current of 20A (Tc). It offers a maximum on-resistance (Rds On) of 290mOhm at 10A and 10V.
The MOSFET operates within a temperature range of -65°C to 150°C (TJ) and has a gate threshold voltage (Vgs(th)) of 5V at 250µA. The maximum gate-source voltage (Vgs) is ±30V.
Packaged in a TO-247-3 configuration, this component is designed for through-hole mounting. Its technology is based on MOSFET (Metal Oxide) principles, providing efficient switching capabilities for various power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
TO-247-3.
-65°C to 150°C junction temperature.
20A at case temperature.
290 milliohms maximum at 10A and 10V gate drive.
37 nC at 10V gate-source voltage.
1300 pF at 25V drain-source voltage.